Fine Ceramics

Aluminum Nitride Substrate

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AlN has excellent thermal conductivity, is thus considered as high performance electronic packaging material.


Leatec offers a series of substrates based on AlN materials for use in application environments.
These materials are available in both lapped and “as fired” condition as well as metalized and non-metalized substrates.

 

Features：


High thermal conductivity, 7 to 8 times as much as alumina
Thermal expansion is close to silicon wafer
High insulation resistivity
High density and high mechanical strength
Good chemical durability

Applications：


Power modulus, IGBT, MOSFET,..
High power LED package
LED chip submount

 

Characteristics of Material：
 
Item Material AlN
Appearance - Gray
Bulk density g /c.c. 3.3
Thermal characteristics Thermal conductivity W/mk 170
Coefficient of linear thermal expansion RT ~ 300℃ (×10-6/℃) 3.77
RT ~ 500℃ (×10-6/℃) 4.38
Electrical characteristics Dielectric strength V/m >17
Volume resistivity Ohm．cm >1014
Dielectric constant 1 MHz 9.9
Dielectric loss angle 1 MHz (×10-3) 4
Mechanical characteristics Flexure strength Mpa 350

The presented value are typical material properties and were determined for test samples and follow testing standard. It may vary according to production configuration and manufacturing process. It do not a guarantee for certain properties. Leatec reserve the right to make technical changes.

 

General Dimensional Specification：
 
Item Standard Premium
Dimension Max. 4.5” × 4.5” Max. 4.5” × 4.5”
Thickness as-fired 0.4 ~ 1.0 mm Lapped 0.25 ~ 1.0mm
Dimensions tolerance ± 1% NLT ± 0.1mm ± 1% NLT ± 0.1mm
Thickness tolerance ± 10% ± 0.02mm
Warp tolerance ≦ 0.002mm/mm ≦ 0.003mm/mm
Surface roughness 0.2 ~ 0.6μm, as fired 0.2 ~ 0.5μm, Lapping

Characteristics Comparison (AlN/Al2O3) ：

Thermal Characteristics ：

Thermal Conductivity VS. Temperature ：